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 DB-2933-54
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs
General feature

Excellent thermal stability Frequency: 1.6 - 54MHz Supply voltage: 48V Output power: 400W typ. Input power 10W max. Efficiency: 57% - 76% IMD at 300WPEP < -26dBc Load mismatch: 3:1all phases
Description
The DB-2933-54 is a RF broadband power amplifier intended for linear or nonlinear operation over the band 1.6 to 54 MHz using 2x SD2933 gold metallized N-channel MOS field-effect transistors. The temperature compensating biasing circuit supports class B and class AB operation. DB-2933-54 is designed in cooperation with Specific RF Devices. (e-mail : specific.rf.devices@t-online.de)
Order Code
DB-2933-54
October 2006
Rev 1
1/13
www.st.com 13
Contents
DB-2933-54
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 3 4 5 6
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Photos of DB-2933-54 amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 DB-2933-54 class of operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 SD2933 mounting recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6.1 6.2 Mounting recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Mounting sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
DB-2933-54
Electrical data
1
1.1
Electrical data
Maximum ratings
Table 1.
Symbol PIN POUT VDD
(1)
Absolute maximum ratings
Parameter Input power Output power Drain supply voltage Gate biasing voltage Drain current Power dissipation Value 16 500 50 15 20 400 Unit W W V V A W
VGG IDD PDISS
1. VGG from 9 to 15V and PIN < 16W
3/13
Electrical characteristics
DB-2933-54
2
Electrical characteristics
TA = +25 oC, VDD = 48V, IDQ = 2 x 900mA Table 2.
Symbol Freq POUT Gain ND H2 H3 VSWR
Electrical Specification
Test Conditions Frequency range PIN = 10W PIN = 10W PIN = 10W 2
ND
Min 1.6 300
Typ
Max 54
Unit MHz W dB % dBc dBc
400 16.2 0.6dB 57 - 76 -26 / -49 -13 / -58 3:1
Harmonic @ POUT = 300W
3RD Harmonic @ POUT = 300W Load mismatch all phases @ POUT = 300W
4/13
DB-2933-54
Typical performance
3
Figure 1.
60 59 58
Typical performance
Output power & efficiency vs frequency
100 90 80
O u tp u t Po w er (d B m )
Figure 2.
60 59 58
Output power & efficiency vs frequency
100 90 80 70 60 50 40 30 V dd = 48V Id q = 2 x 9 0 0 m A Pin = 1 0 W 20 10 0 E f f ic ie n c y ( % )
O u tp u t P o w e r (d B m )
- eff - Pout
- eff - Pout
57 56 55 54 53 52 51 50 0 5 10 15 20 25 30 35 40 45 50 55 60 65 V dd = 40V Id q = 2 x 9 0 m A Pin = 1 0 W
70 60 50 40 30 20 10 0
E f f ic ie n c y ( % )
57 56 55 54 53 52 51 50 0 5 10 15 20 25 30 35 40 45 50 55 60 65 Fr e q u e n c y (M Hz )
Fr e q u e n c y ( M H z )
Figure 3.
0 -5 -1 0 -1 5 IM D (d B c ) -2 0 -2 5 -3 0 -3 5 -4 0 0 IMD 5
IMD vs frequency
Figure 4.
600 500 O u tp u t Po w er (W ) 400 300 200 100 0 10 14
Output power vs drain voltage
V dd = 48V Id q = 2 x 9 0 0 m A Po u t = 3 0 0 W PEP
Pin = 1 0 W Id q = 2 x 9 0 0 m A
18
22
26
30
34
38
42
46
50
10
15
20
25
30
35
40
45
50
55
60
65
1.6 M H z 2 8 M Hz
D r a in v o lt a g e ( V )
5 M Hz 4 0 M Hz 10 M H z 6 0 M Hz 2 0 M Hz
F r e q u e n c y (M H z )
5/13
Typical performance Figure 5. Harmonics vs frequency
DB-2933-54
0 -10 Harmonics (dBc) -20 -30 -40 -50 -60 -70 0
H 2 Vdd = 48V Idq = 2x 900 m A P = 300 W E out PP
5
H 3
10
15
20
25
30
35
40
45
50
55
60
65
Frequency (MHz)
6/13
DB-2933-54
Photos of DB-2933-54 amplifier
4
Photos of DB-2933-54 amplifier
Figure 6. Top view
Figure 7.
Side view
7/13
DB-2933-54 class of operation
DB-2933-54
5
DB-2933-54 class of operation

class B :
a low bias point with ~100mA per transistor
class AB : a higher bias point with ~ 900mA per transistor The bias point is 2x 100 mA if "BIAS" is left open and in this case a DC voltage of ~5V is present The bias point is 2 x 900 mA if "BIAS" is connected to ground. To switch-on biasing circuit, connect "PA_ON" to ground. To switch-off biasing circuit, left open "PA_ON"
To select a bias point, DB-2933-54 has a control port "BIAS".

"PA_ON" control port / ON-OFF bias current

8/13
DB-2933-54
SD2933 mounting recommendations
6
6.1
SD2933 mounting recommendations
Mounting recommendations

Ensure holes in heatsinks are free from burrs; Minimum depth of tapped holes in heatsinks is 6 mm; Use 4-40 UNC-2A cheese-head screws with a flat washer to spread the joint pressure; The minimum flatness of the mounting area is 0.02 mm; Mounting area roughness should be less than 0.5 m (micro); Avoid, as much as possible, use of flux or flux solutions because flux can penetrate even when hermetically sealed ceramic-capped transistors. Tin and wash the printedcircuit board BEFORE mounting the power transistors, then solder the transistor leads without using flux; Transistor leads may be tinned by dipping them full-length into a solder bath at a temperature of about 230C. No flux should be used during tinning; Recommended heatsink compounds : WPSII (silicon free) from Austerlitz Electronics, 340 from Dow Corning etc.

6.2
Mounting sequence

Apply a thin layer of evenly distributed heatsink compound to the flange; Position the device with flat washers in place; Tighten the screws until finger tight (0.05 Nm); Further tighten the screws until the specified torque is reached; For M174, M177 & M244 type of packages, torque should be minimum 0.6 Nm and 0.75 Nm max.
9/13
SD2933 mounting recommendations
DB-2933-54
Table 3.
DMOS Packages - List of materials
Ceramic insulator BeO (99.5% min) Plating Leads Flange Torque (Nm) Min Max
Package Description Flange Leadframe Type 0.500 DIA 4L NON HERM W/FLANGE ALLOY 42 (Fe58 / Ni42)
M174
Cu
Au (100 min) over Ni(100 min) + Pd Ni (100 min / (10 min) 350 max)
0.6
0.75
M174 (Moly disk)
0.500 DIA 4L NON HERM Cu-MoW/FLANGE Cu (MOLY DISK) 0.550 DIA 4L NON Cu-MoHERM Cu W/FLANGE 2x W 0.400x0.425 (85%) WIDE 2L Cu LAP N/H (15%) FLANGE
ALLOY 42 (Fe58 / Ni42)
BeO (99.5% min)
Au (100 min) over Ni(100 min) + Pd Ni (100 min / (10 min) 350 max)
0.6
0.75
M177
ALLOY 42 (Fe58 / Ni42)
BeO (99.5% min)
Au (60 min) over Ni (100 min / 350 max)
Au (100 min) over Ni (100 min / 350 max)
0.6
0.75
M244
ALLOY 42 (Fe58 / Ni42)
BeO(99.5 % min)
Au (60 min) over Ni (100 min / 350 max)
Au (60 min) over Ni (100 min / 350 max)
0.6
0.75
10/13
DB-2933-54
Package mechanical data
7
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
11/13
Revision history
DB-2933-54
8
Revision history
Table 4.
Date 19-Oct-2006
Revision history
Revision 1 Initial release Changes
12/13
DB-2933-54
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